Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B

Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B

Vertically aligned InAs nanowires (NWs) doped with Si were grown self-assisted by molecular beam epitaxy on GaAs[111]B substrates covered with a thin SiO x layer. Using out-of-plane X-ray diffraction, the influence of Si supply on the growth process and nanostructure formation was studied. It was fo...

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Bibliographische Detailangaben
Veröffentlicht in:Journal of applied crystallography. - 1998. - 46(2013), Pt 4 vom: 01. Aug., Seite 893-897
1. Verfasser: Davydok, Anton (VerfasserIn)
Weitere Verfasser: Rieger, Torsten, Biermanns, Andreas, Saqib, Muhammad, Grap, Thomas, Lepsa, Mihail Ion, Pietsch, Ullrich
Format: Aufsatz
Sprache:English
Veröffentlicht: 2013
Zugriff auf das übergeordnete Werk:Journal of applied crystallography
Schlagworte:Journal Article X-ray diffraction molecular beam epitaxy (MBE) growth semiconductor nanowires