Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams
Grazing-incidence X-ray diffraction measurements on single GaAs nanowires (NWs) grown on a (111)-oriented GaAs substrate by molecular beam epitaxy are reported. The positions of the NWs are intentionally determined by a direct implantation of Au with focused ion beams. This controlled arrangement in...
| Veröffentlicht in: | Journal of applied crystallography. - 1998. - 46(2013), Pt 4 vom: 01. Aug., Seite 887-892 |
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| 1. Verfasser: | |
| Weitere Verfasser: | , , , , , , , |
| Format: | Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2013
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| Zugriff auf das übergeordnete Werk: | Journal of applied crystallography |
| Schlagworte: | Journal Article GaAs grazing-incidence X-ray diffraction growth semiconductor nanowires |