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231224s2013 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201301267
|2 doi
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|a pubmed24n0768.xml
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|a eng
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|a Chang, Jingjing
|e verfasserin
|4 aut
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|a Controlled growth of large-area high-performance small-molecule organic single-crystalline transistors by slot-die coating using a mixed solvent system
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|c 2013
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 14.07.2014
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|a Date Revised 30.03.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a A slot-die coating technique is used for the crystal alignment of triisopropylsilylethynyl (TIPS)-pentacene in solution-processed field-effect transistors (FETs). The film thickness, uniformity, and crystal growth behavior are well controlled by tuning the coating parameters and by using a mixed solvent system (toluene/anisole). An average saturation regime FET mobility of 1.8 cm(2) V(-1) s(-1) is achieved under ambient conditions
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a crystal anisotropy
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|a mixed solvent systems
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|a organic single-crystalline transistors
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|a slot-die coating
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|a Chi, Chunyan
|e verfasserin
|4 aut
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1 |
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|a Zhang, Jie
|e verfasserin
|4 aut
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| 700 |
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|a Wu, Jishan
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 25(2013), 44 vom: 26. Nov., Seite 6442-7
|w (DE-627)NLM098206397
|x 1521-4095
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|g volume:25
|g year:2013
|g number:44
|g day:26
|g month:11
|g pages:6442-7
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|u http://dx.doi.org/10.1002/adma.201301267
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