Reliable and uniform thin-film transistor arrays based on inkjet-printed polymer semiconductors for full color reflective displays

Reliable and uniform thin-film transistor arrays based on inkjet-printed polymer semiconductors for full color reflective displays

© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 41 vom: 06. Nov., Seite 5886-92
1. Verfasser: Lee, Jiyoul (VerfasserIn)
Weitere Verfasser: Kim, Do Hwan, Kim, Joo-Young, Yoo, Byungwook, Chung, Jong Won, Park, Jeong-Il, Lee, Bang-Lin, Jung, Ji Young, Park, Joon Seok, Koo, Bonwon, Im, Seongil, Kim, Jung Woo, Song, Byungkwon, Jung, Myung-Hoon, Jang, Jae Eun, Jin, Yong Wan, Lee, Sang-Yoon
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2013
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't flexible display inkjet-printing organic field-effect transistors polymer semiconductor stability
LEADER 01000caa a22002652 4500
001 NLM230165524
003 DE-627
005 20250215193913.0
007 cr uuu---uuuuu
008 231224s2013 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.201301257  |2 doi 
028 5 2 |a pubmed25n0767.xml 
035 |a (DE-627)NLM230165524 
035 |a (NLM)23960028 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Lee, Jiyoul  |e verfasserin  |4 aut 
245 1 0 |a Reliable and uniform thin-film transistor arrays based on inkjet-printed polymer semiconductors for full color reflective displays 
264 1 |c 2013 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 06.10.2014 
500 |a Date Revised 30.09.2020 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a Stable uniform performance inkjet-printed polymer transistor arrays, which allow demonstration of flexible full-color displays, were achieved by new ambient processable conjugated copolymer semiconductor, and OTFT devices incorporating this material showed high mobility values>1.0 cm2 V(-1) s(-1). Bias-stress stability of the devices was improved with a channel-passivation layer, which suppresses the density of trap states at the channel interface 
650 4 |a Journal Article 
650 4 |a Research Support, Non-U.S. Gov't 
650 4 |a flexible display 
650 4 |a inkjet-printing 
650 4 |a organic field-effect transistors 
650 4 |a polymer semiconductor 
650 4 |a stability 
700 1 |a Kim, Do Hwan  |e verfasserin  |4 aut 
700 1 |a Kim, Joo-Young  |e verfasserin  |4 aut 
700 1 |a Yoo, Byungwook  |e verfasserin  |4 aut 
700 1 |a Chung, Jong Won  |e verfasserin  |4 aut 
700 1 |a Park, Jeong-Il  |e verfasserin  |4 aut 
700 1 |a Lee, Bang-Lin  |e verfasserin  |4 aut 
700 1 |a Jung, Ji Young  |e verfasserin  |4 aut 
700 1 |a Park, Joon Seok  |e verfasserin  |4 aut 
700 1 |a Koo, Bonwon  |e verfasserin  |4 aut 
700 1 |a Im, Seongil  |e verfasserin  |4 aut 
700 1 |a Kim, Jung Woo  |e verfasserin  |4 aut 
700 1 |a Song, Byungkwon  |e verfasserin  |4 aut 
700 1 |a Jung, Myung-Hoon  |e verfasserin  |4 aut 
700 1 |a Jang, Jae Eun  |e verfasserin  |4 aut 
700 1 |a Jin, Yong Wan  |e verfasserin  |4 aut 
700 1 |a Lee, Sang-Yoon  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 25(2013), 41 vom: 06. Nov., Seite 5886-92  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:25  |g year:2013  |g number:41  |g day:06  |g month:11  |g pages:5886-92 
856 4 0 |u http://dx.doi.org/10.1002/adma.201301257  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 25  |j 2013  |e 41  |b 06  |c 11  |h 5886-92