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231224s2013 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201301903
|2 doi
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|a pubmed24n0765.xml
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|a (DE-627)NLM229727298
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|a (NLM)23913762
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|e rakwb
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|a eng
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|a Liu, Jian-Wei
|e verfasserin
|4 aut
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|a Ultrathin hetero-nanowire-based flexible electronics with tunable conductivity
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|c 2013
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 06.10.2014
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Flexible hetero-nanowire electronics: A simple solution process has been developed for the first time to fabricate macroscopic flexible, ordered Au-Te hetero-nanowire film electronics with tunable resistance from MΩ to Ω at room temperature (see the Figure). Nanowire films with an electrical conductivity as low as 10,000 S cm(-1) and a sheet resistance of 15Ω sq(-1) can generate reliable interconnections for light-emitting diode (LED) arrays. The Au-Te hetero-nanowire films remain conductive after bending 6000 times with a maximum bending radius of 2.0 mm without any obvious degradation
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a conductivity
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|a flexible electronics
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|a heteronanowires
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|a nanowire films
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|a self-assembly
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|a Gold
|2 NLM
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|a 7440-57-5
|2 NLM
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|a Tellurium
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|a NQA0O090ZJ
|2 NLM
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|a Huang, Wei-Ran
|e verfasserin
|4 aut
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|a Gong, Ming
|e verfasserin
|4 aut
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1 |
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|a Zhang, Meng
|e verfasserin
|4 aut
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|a Wang, Jin-Long
|e verfasserin
|4 aut
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|a Zheng, Jing
|e verfasserin
|4 aut
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|a Yu, Shu-Hong
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 25(2013), 41 vom: 06. Nov., Seite 5910-5
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:25
|g year:2013
|g number:41
|g day:06
|g month:11
|g pages:5910-5
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|u http://dx.doi.org/10.1002/adma.201301903
|3 Volltext
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