The memristive properties of a single VO2 nanowire with switching controlled by self-heating
© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
| Publié dans: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 36 vom: 25. Sept., Seite 5098-103 |
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| Auteur principal: | |
| Autres auteurs: | , , , , , |
| Format: | Article en ligne |
| Langue: | English |
| Publié: |
2013
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| Accès à la collection: | Advanced materials (Deerfield Beach, Fla.) |
| Sujets: | Journal Article Research Support, Non-U.S. Gov't memristor metal-to-insulator transition non-volatile memory device resistive switching device vanadium dioxide nanowire |
| Résumé: | © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. A two-terminal memristor memory based on a single VO2 nanowire is reported that can not only provide switchable resistances in a large range of about four orders of magnitude but can also maintain the resistances by a low bias voltage. The phase transition of the single VO2 nanowire was driven by the bias voltage of 0.34 V without using any heat source. The memristive behavior of the single VO2 nanowire was confirmed by observing the switching and non-volatile properties of resistances when voltage pulses and low bias voltage were applied, respectively. Furthermore, multiple retainable resistances in a large range of about four orders of magnitude can be utilized by controlling the number and the amount of voltage pulses under the low bias voltage. This is a key step towards the development of new low-power and two-terminal memory devices for next-generation non-volatile memories |
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| Description: | Date Completed 21.04.2014 Date Revised 30.09.2020 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.201302511 |