Fabrication of DNA-templated Te and Bi2Te3 nanowires by galvanic displacement

This paper demonstrates the use of galvanic displacement to form continuous tellurium-based nanowires on DNA templates, enabling the conversion of metals, which can be deposited site-specifically, into other materials needed for device fabrication. Specifically, galvanic displacement reaction of cop...

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Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1992. - 29(2013), 35 vom: 03. Sept., Seite 11176-84
1. Verfasser: Liu, Jianfei (VerfasserIn)
Weitere Verfasser: Uprety, Bibek, Gyawali, Shailendra, Woolley, Adam T, Myung, Nosang V, Harb, John N
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2013
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S. DNA, Viral bismuth telluride 1818R19OHO Silver 3M4G523W1G Copper 789U1901C5 mehr... Nickel 7OV03QG267 Tellurium NQA0O090ZJ Bismuth U015TT5I8H
LEADER 01000naa a22002652 4500
001 NLM229612180
003 DE-627
005 20231224082533.0
007 cr uuu---uuuuu
008 231224s2013 xx |||||o 00| ||eng c
024 7 |a 10.1021/la402678j  |2 doi 
028 5 2 |a pubmed24n0765.xml 
035 |a (DE-627)NLM229612180 
035 |a (NLM)23901791 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Liu, Jianfei  |e verfasserin  |4 aut 
245 1 0 |a Fabrication of DNA-templated Te and Bi2Te3 nanowires by galvanic displacement 
264 1 |c 2013 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 17.03.2014 
500 |a Date Revised 03.09.2013 
500 |a published: Print-Electronic 
500 |a Citation Status MEDLINE 
520 |a This paper demonstrates the use of galvanic displacement to form continuous tellurium-based nanowires on DNA templates, enabling the conversion of metals, which can be deposited site-specifically, into other materials needed for device fabrication. Specifically, galvanic displacement reaction of copper and nickel nanowires is used to fabricate tellurium and bismuth telluride nanowires on λ-DNA templates. The method is simple, rapid, highly selective, and applicable to a number of different materials. In this study, continuous Ni and Cu nanowires are formed on DNA templates by seeding with Ag followed by electroless plating of the desired metal. These wires are then displaced by a galvanic displacement reaction where either Te or Bi2Te3 is deposited from an acidic solution containing HTeO2(+) ions or a combination of HTeO2(+) and Bi(3+) ions, and the metal wire is simultaneously dissolved due to oxidation. Both tellurium and bismuth telluride wires can be formed from nickel templates. In contrast, copper templates only form tellurium nanowires under the conditions considered. Therefore, the composition of the metal being displaced can be used to influence the chemistry of the resulting nanowire. Galvanic displacement of metals deposited on DNA templates has the potential to enable site-specific fabrication of a variety of materials and, thereby, make an important contribution to the advancement of useful devices via self-assembled nanotemplates 
650 4 |a Journal Article 
650 4 |a Research Support, Non-U.S. Gov't 
650 4 |a Research Support, U.S. Gov't, Non-P.H.S. 
650 7 |a DNA, Viral  |2 NLM 
650 7 |a bismuth telluride  |2 NLM 
650 7 |a 1818R19OHO  |2 NLM 
650 7 |a Silver  |2 NLM 
650 7 |a 3M4G523W1G  |2 NLM 
650 7 |a Copper  |2 NLM 
650 7 |a 789U1901C5  |2 NLM 
650 7 |a Nickel  |2 NLM 
650 7 |a 7OV03QG267  |2 NLM 
650 7 |a Tellurium  |2 NLM 
650 7 |a NQA0O090ZJ  |2 NLM 
650 7 |a Bismuth  |2 NLM 
650 7 |a U015TT5I8H  |2 NLM 
700 1 |a Uprety, Bibek  |e verfasserin  |4 aut 
700 1 |a Gyawali, Shailendra  |e verfasserin  |4 aut 
700 1 |a Woolley, Adam T  |e verfasserin  |4 aut 
700 1 |a Myung, Nosang V  |e verfasserin  |4 aut 
700 1 |a Harb, John N  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Langmuir : the ACS journal of surfaces and colloids  |d 1992  |g 29(2013), 35 vom: 03. Sept., Seite 11176-84  |w (DE-627)NLM098181009  |x 1520-5827  |7 nnns 
773 1 8 |g volume:29  |g year:2013  |g number:35  |g day:03  |g month:09  |g pages:11176-84 
856 4 0 |u http://dx.doi.org/10.1021/la402678j  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_22 
912 |a GBV_ILN_350 
912 |a GBV_ILN_721 
951 |a AR 
952 |d 29  |j 2013  |e 35  |b 03  |c 09  |h 11176-84