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231224s2013 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201300636
|2 doi
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|a pubmed24n0765.xml
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|a (DE-627)NLM229535372
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|a (NLM)23893892
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|a eng
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|a Pal, Avradeep
|e verfasserin
|4 aut
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|a Electric-field-dependent spin polarization in GdN spin filter tunnel junctions
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|c 2013
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 14.05.2014
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Tunnel junctions incorporating GdN ferromagnetic semiconductor barriers show a spin polarization exceeding 90% and a high conductance. These devices show an unusual low-bias conductance peak arising from a strong bias-dependence of the spin polarization. This originates from a strong magneto-electric coupling within a double Schottky barrier formed with the NbN electrodes
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a GdN
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|a Spin filter
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|a magneto-electric effects
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|a tunnel junctions
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|a Senapati, K
|e verfasserin
|4 aut
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|a Barber, Z H
|e verfasserin
|4 aut
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|a Blamire, M G
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 25(2013), 39 vom: 18. Okt., Seite 5581-5
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|x 1521-4095
|7 nnns
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|g volume:25
|g year:2013
|g number:39
|g day:18
|g month:10
|g pages:5581-5
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|u http://dx.doi.org/10.1002/adma.201300636
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