Sericin for resistance switching device with multilevel nonvolatile memory

Sericin for resistance switching device with multilevel nonvolatile memory

Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 38 vom: 11. Okt., Seite 5498-503
1. Verfasser: Wang, Hong (VerfasserIn)
Weitere Verfasser: Meng, Fanben, Cai, Yurong, Zheng, Liyan, Li, Yuangang, Liu, Yuanjun, Jiang, Yueyue, Wang, Xiaotian, Chen, Xiaodong
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2013
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't electronic device multilevel memory protein resistance switching sericin Sericins Water 059QF0KO0R
Beschreibung
Zusammenfassung:Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Resistance switching characteristics of natural sericin protein film is demonstrated for nonvolatile memory application for the first time. Excellent memory characteristics with a resistance OFF/ON ratio larger than 10(6) have been obtained and a multilevel memory based on sericin has been achieved. The environmentally friendly high performance biomaterial based memory devices may hold a place in the future of electronic device development
Beschreibung:Date Completed 14.05.2014
Date Revised 30.09.2020
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201301983