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231224s2013 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201301097
|2 doi
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|a pubmed24n0762.xml
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|a (DE-627)NLM228774969
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|a DE-627
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|e rakwb
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|a eng
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| 100 |
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|a Kim, Shin-Ik
|e verfasserin
|4 aut
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|a Non-volatile control of 2DEG conductivity at oxide interfaces
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|c 2013
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 01.05.2014
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The functionalization of two-dimensional electron gas (2DEG) at oxide interfaces can be realized integrating 2DEG with multifunctional oxide overlayers by epitaxial growth. Using a ferroelectric Pb(Zr0.2 Ti0.8 )O3 overlayer on 2DEG (LaAlO3 /SrTiO3 ), we demonstrate a model system of the functionalized 2DEG, where electrical conductivity of 2DEG can be reversibly controlled with a large on/off ratio (>1000) in a non-volatile way by ferroelectric polarization switching
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|a Journal Article
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|a epitaxial oxide thin films
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|a ferroelectric
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|a multifunctional oxide
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|a two-dimentional electron gas
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|a Kim, Dai-Hong
|e verfasserin
|4 aut
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|a Kim, Yoonjung
|e verfasserin
|4 aut
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|a Moon, Seon Young
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|a Kang, Min-Gyu
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|a Choi, Jong Kwon
|e verfasserin
|4 aut
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|a Jang, Ho Won
|e verfasserin
|4 aut
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|a Kim, Seong Keun
|e verfasserin
|4 aut
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|a Choi, Ji-Won
|e verfasserin
|4 aut
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|a Yoon, Seok-Jin
|e verfasserin
|4 aut
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|a Chang, Hye Jung
|e verfasserin
|4 aut
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|a Kang, Chong-Yun
|e verfasserin
|4 aut
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|a Lee, Suyoun
|e verfasserin
|4 aut
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|a Hong, Seong-Hyeon
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|4 aut
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|a Kim, Jin-Sang
|e verfasserin
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|a Baek, Seung-Hyub
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 25(2013), 33 vom: 06. Sept., Seite 4612-7
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:25
|g year:2013
|g number:33
|g day:06
|g month:09
|g pages:4612-7
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|u http://dx.doi.org/10.1002/adma.201301097
|3 Volltext
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