Wet chemical etching of semipolar GaN planes to obtain brighter and cost-competitive light emitters
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
| Publié dans: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 32 vom: 27. Aug., Seite 4470-6 |
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| Auteur principal: | |
| Autres auteurs: | , , |
| Format: | Article en ligne |
| Langue: | English |
| Publié: |
2013
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| Accès à la collection: | Advanced materials (Deerfield Beach, Fla.) |
| Sujets: | Journal Article Research Support, Non-U.S. Gov't extraction efficiencies light emitting diodes ohmic contacts semipolar GaN planes wet etching |
| Résumé: | Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Spotlight on etching: (11-22) semipolar GaN plane light-emitting diodes (LEDs) are demonstrated using a wet-etching process. A trigonal prism cell structure with a (0001) c plane and nnn{10-10} m planes is formed after KOH wet etching, and leads to a better ohmic contact and enhanced light extraction. LEDs fabricated by wet etching show excellent output performance 1.89 times higher than that of the reference LEDs |
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| Description: | Date Completed 10.03.2014 Date Revised 30.09.2020 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.201301640 |