Ferroelectric control of the conduction at the LaAlO₃/SrTiO₃ heterointerface

Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 24 vom: 25. Juni, Seite 3357-64
1. Verfasser: Tra, Vu Thanh (VerfasserIn)
Weitere Verfasser: Chen, Jhih-Wei, Huang, Po-Cheng, Huang, Bo-Chao, Cao, Ye, Yeh, Chao-Hui, Liu, Heng-Jui, Eliseev, Eugene A, Morozovska, Anna N, Lin, Jiunn-Yuan, Chen, Yi-Chun, Chu, Ming-Wen, Chiu, Po-Wen, Chiu, Ya-Ping, Chen, Long-Qing, Wu, Chung-Lin, Chu, Ying-Hao
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2013
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't
Beschreibung
Zusammenfassung:Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Modulation of band bending at a complex oxide heterointerface by a ferroelectric layer is demonstrated. The as-grown polarization (Pup ) leads to charge depletion and consequently low conduction. Switching the polarization direction (Pdown ) results in charge accumulation and enhances the conduction at the interface. The metal-insulator transition at a conducting polar/nonpolar oxide heterointerface can be controlled by ferroelectric doping
Beschreibung:Date Completed 24.06.2015
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201300757