GaP-ZnS solid solutions : Semiconductors for efficient visible light absorption and emission

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 21 vom: 04. Juni, Seite 2989-93
1. Verfasser:	Hart, Judy N (VerfasserIn)
Weitere Verfasser:	Allan, Neil L
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2013
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article Semiconductor density functional theory photocatalysis solid-solution


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245	1	0	\|a GaP-ZnS solid solutions \|b Semiconductors for efficient visible light absorption and emission
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520			\|a Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
520			\|a GaP-ZnS solid solutions and multilayered structures have a tunable direct band gap in the energy range for absorption and emission of visible light. A direct band gap of around 2.0 eV, the optimum for photocatalysis of water splitting, is readily accessible with these systems
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