Low-temperature solution-processed hydrogen molybdenum and vanadium bronzes for an efficient hole-transport layer in organic electronics

Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 14 vom: 11. Apr., Seite 2051-5
Auteur principal: Xie, Fengxian (Auteur)
Autres auteurs: Choy, Wallace C H, Wang, Chuandao, Li, Xinchen, Zhang, Shaoqing, Hou, Jianhui
Format: Article en ligne
Langue:English
Publié: 2013
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article Research Support, Non-U.S. Gov't Oxides Polystyrenes Solutions Thiophenes Vanadium Compounds poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) molybdenum trioxide 22FQ3F03YS plus... Hydrogen 7YNJ3PO35Z Molybdenum 81AH48963U vanadium pentoxide BVG363OH7A
Description
Résumé:Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
A simple one-step method is reported to synthesize low-temperature solution-processed transition metal oxides (TMOs) of molybdenum oxide and vanadium oxide with oxygen vacancies for a good hole-transport layer (HTL). The oxygen vacancy plays an essential role for TMOs when they are employed as HTLs: TMO films with excess oxygen are highly undesirable for their application in organic electronics
Description:Date Completed 23.09.2013
Date Revised 30.09.2020
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201204425