A low energy oxide-based electronic synaptic device for neuromorphic visual systems with tolerance to device variation

Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 12 vom: 25. März, Seite 1774-9
1. Verfasser: Yu, Shimeng (VerfasserIn)
Weitere Verfasser: Gao, Bin, Fang, Zheng, Yu, Hongyu, Kang, Jinfeng, Wong, H-S Philip
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2013
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S. Oxides
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520 |a Neuromorphic computing is an emerging computing paradigm beyond the conventional digital von Neumann computation. An oxide-based resistive switching memory is engineered to emulate synaptic devices. At the device level, the gradual resistance modulation is characterized by hundreds of identical pulses, achieving a low energy consumption of less than 1 pJ per spike. Furthermore, a stochastic compact model is developed to quantify the device switching dynamics and variation. At system level, the performance of an artificial visual system on the image orientation or edge detection with 16 348 oxide-based synaptic devices is simulated, successfully demonstrating a key feature of neuromorphic computing: tolerance to device variation 
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650 4 |a Research Support, Non-U.S. Gov't 
650 4 |a Research Support, U.S. Gov't, Non-P.H.S. 
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700 1 |a Gao, Bin  |e verfasserin  |4 aut 
700 1 |a Fang, Zheng  |e verfasserin  |4 aut 
700 1 |a Yu, Hongyu  |e verfasserin  |4 aut 
700 1 |a Kang, Jinfeng  |e verfasserin  |4 aut 
700 1 |a Wong, H-S Philip  |e verfasserin  |4 aut 
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