Electron doping by charge transfer at LaFeO3/Sm2CuO4 epitaxial interfaces

Electron doping by charge transfer at LaFeO3/Sm2CuO4 epitaxial interfaces

Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 10 vom: 13. März, Seite 1468-73
1. Verfasser: Bruno, Flavio Y (VerfasserIn)
Weitere Verfasser: Schmidt, Rainer, Varela, Maria, Garcia-Barriocanal, Javier, Rivera-Calzada, Alberto, Cuellar, Fabian A, Leon, Carlos, Thakur, Pardeep, Cezar, Julio C, Brookes, Nicholas B, Garcia-Hernandez, Mar, Dagotto, Elbio, Pennycook, Stephen J, Santamaria, Jacobo
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2013
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S.
Beschreibung
Zusammenfassung:Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Using X-ray absorption spectroscopy and electron energy loss spectroscopy with atomic-scale spatial resolution, experimental evidence for charge transfer at the interface between the Mott insulators Sm2 CuO4 and LaFeO3 is obtained. As a consequence of the charge transfer, the Sm2 CuO4 is doped with electrons and thus epitaxial Sm2 CuO4 /LaFeO3 heterostructures become metallic
Beschreibung:Date Completed 03.09.2013
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201203483