Directing silicon-graphene self-assembly as a core/shell anode for high-performance lithium-ion batteries

There is great interest in utilization of silicon-containing nanostructures as anode materials for lithium-ion batteries but usually limited by manufacturing cost, their intrinsic low electric conductivity, and large volume changes during cycling. Here we present a facile process to fabricate graphe...

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Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1992. - 29(2013), 2 vom: 15. Jan., Seite 744-9
1. Verfasser: Zhu, Yuanhua (VerfasserIn)
Weitere Verfasser: Liu, Wen, Zhang, Xinyue, He, Jinchao, Chen, Jitao, Wang, Yapei, Cao, Tingbing
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2013
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article
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520 |a There is great interest in utilization of silicon-containing nanostructures as anode materials for lithium-ion batteries but usually limited by manufacturing cost, their intrinsic low electric conductivity, and large volume changes during cycling. Here we present a facile process to fabricate graphene-wrapped silicon nanowires (GNSSi NWs) directed by electrostatic self-assembly. The highly conductive and mechanical flexible graphene could partially accommodate the large volume change associated with the conversion reaction and also contributed to the enhanced electronic conductivity. The as-prepared GNS@Si NWs delivered a reversible capacity of 1648 mAh·g(-1) with an initial Coulombic efficiency as high as 80%. Moreover, capacity remained 1335 mAh·g(-1) after 80 cycles at a current of 200 mA·g(-1), showing significantly improved electrochemical performance in terms of rate capability and cycling performance 
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700 1 |a Liu, Wen  |e verfasserin  |4 aut 
700 1 |a Zhang, Xinyue  |e verfasserin  |4 aut 
700 1 |a He, Jinchao  |e verfasserin  |4 aut 
700 1 |a Chen, Jitao  |e verfasserin  |4 aut 
700 1 |a Wang, Yapei  |e verfasserin  |4 aut 
700 1 |a Cao, Tingbing  |e verfasserin  |4 aut 
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