Aqueous stability of Ga- and N-polar gallium nitride
The stability of III-nitride semiconductors in various solutions becomes important as researchers begin to integrate them into sensing platforms. This study quantitatively compares the stability of GaN surfaces with different polarities. This type of quantification is important because it represents...
Ausführliche Beschreibung
Bibliographische Detailangaben
| Veröffentlicht in: | Langmuir : the ACS journal of surfaces and colloids. - 1992. - 29(2013), 1 vom: 08. Jan., Seite 216-20
|
|---|
| 1. Verfasser: |
Foster, Corey M
(VerfasserIn) |
|---|
| Weitere Verfasser: |
Collazo, Ramon,
Sitar, Zlatko,
Ivanisevic, Albena |
|---|
| Format: | Online-Aufsatz
|
|---|
| Sprache: | English |
|---|
| Veröffentlicht: |
2013
|
|---|
| Zugriff auf das übergeordnete Werk: | Langmuir : the ACS journal of surfaces and colloids
|
|---|
| Schlagworte: | Journal Article
Research Support, U.S. Gov't, Non-P.H.S.
Water
059QF0KO0R
gallium nitride
1R9CC3P9VL
Gallium
CH46OC8YV4 |
|---|