Substituent variation drives metal/monolayer/semiconductor junctions from strongly rectifying to ohmic behavior

Substituent variation drives metal/monolayer/semiconductor junctions from strongly rectifying to ohmic behavior

Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 5 vom: 06. Feb., Seite 702-6
1. Verfasser: Haj-Yahia, Abd-Elrazek (VerfasserIn)
Weitere Verfasser: Yaffe, Omer, Bendikov, Tatyana, Cohen, Hagai, Feldman, Yishay, Vilan, Ayelet, Cahen, David
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2013
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Styrenes Mercury FXS1BY2PGL
Beschreibung
Zusammenfassung:Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
An eight-orders of magnitude enhancement in current across Hg/X-styrene-Si junctions is caused by merely altering a substituent, X. Interface states are passivated and, depending on X, the Si Schottky junction encompasses the full range from Ohmic to strongly rectifying. This powerful electrostatic molecular effect has immediate implications for interface band alignment and sensing
Beschreibung:Date Completed 16.07.2013
Date Revised 30.09.2020
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201203028