Mid-infrared HgTe/As2S3 field effect transistors and photodetectors

Mid-infrared HgTe/As2S3 field effect transistors and photodetectors

Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 1 vom: 04. Jan., Seite 137-41
1. Verfasser: Lhuillier, Emmanuel (VerfasserIn)
Weitere Verfasser: Keuleyan, Sean, Zolotavin, Pavlo, Guyot-Sionnest, Philippe
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2013
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't
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520 |a HgTe colloidal quantum dots (CQD) in an inorganic As(2)S(3) matrix allow 100-fold higher mobility with optimized transport properties compared to HgTe-organic CQD film while remaining intrinsic. The material's electronic properties are measured by field effect transistors as a function of temperature and the responsivity and detectivity of the mid-IR photoconductors are discussed 
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