A new SrBi4Ti4O15/CaBi4Ti4O15 thin-film capacitor for excellent electric stability

SrBi(4)Ti(4)O(15) (SBTi) and CaBi(4)Ti(4)O(15) (CBTi) dielectric films of bismuth layered-structure dielectrics (BLSD) are prepared on Pt(100) film for constructing stacked-type dielectric capacitors; it is observed that they are c-axis singleoriented crystalline films. Compared with the perovskite...

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Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 59(2012), 9 vom: 16. Sept., Seite 1888-93
1. Verfasser: Noda, Minoru (VerfasserIn)
Weitere Verfasser: Nomura, Shuhei, Uchida, Hiroshi, Yamashita, Kaoru, Funakubo, Horoshi
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2012
Zugriff auf das übergeordnete Werk:IEEE transactions on ultrasonics, ferroelectrics, and frequency control
Schlagworte:Journal Article Research Support, Non-U.S. Gov't