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|a 10.1002/adma.201202220
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|a eng
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|a Sun, Zhenhua
|e verfasserin
|4 aut
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|a Infrared photodetectors based on CVD-grown graphene and PbS quantum dots with ultrahigh responsivity
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|c 2012
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|a Text
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|a Date Completed 09.04.2013
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Infrared photodetectors based on single-layer CVD-grown graphene and PbS quantum dots, which are fabricated by solution processing, show ultrahigh responsivities of up to 10(7) A/W under infrared light illumination. The devices fabricated on flexible plastic substrates have excellent bending stability. The photoresponse is attributed to the field-effect doping in graphene films induced by negative charges generated in the quantum dots
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|a Li, Jinhua
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|a Tai, Guo-An
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|a Yan, Feng
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|t Advanced materials (Deerfield Beach, Fla.)
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|g 24(2012), 43 vom: 14. Nov., Seite 5878-83
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