A wafer-level integrated white-light-emitting diode incorporating colloidal quantum dots as a nanocomposite luminescent material

A wafer-level integrated white-light-emitting diode incorporating colloidal quantum dots as a nanocomposite luminescent material

Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 24(2012), 44 vom: 20. Nov., Seite 5915-8
Auteur principal: Dang, Cuong (Auteur)
Autres auteurs: Lee, Joonhee, Zhang, Yu, Han, Jung, Breen, Craig, Steckel, Jonathan S, Coe-Sullivan, Seth, Nurmikko, Arto
Format: Article en ligne
Langue:English
Publié: 2012
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article Research Support, U.S. Gov't, Non-P.H.S. Colloids
Description
Résumé:Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
High-brightness, color-tunable colloidal quantum dots are incorporated in 3D nanoporous GaN to create a nanocomposite material (CQD/NP-GaN), which is demonstrated to be an effective approach for a wavelength down-conversion nanomaterial in solid-state lighting. The white-light-emitting diode (LED) made from a blue GaN-based LED and the CQD/NP-GaN shows an increase of extraction efficiency by a factor of 2, a controllable white color, and a down-conversion quantum efficiency as high as 82%
Description:Date Completed 01.05.2013
Date Revised 30.09.2020
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201202354