Remarkable enhancement of hole transport in top-gated N-type polymer field-effect transistors by a high-k dielectric for ambipolar electronic circuits

Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 24(2012), 40 vom: 23. Okt., Seite 5433-9
1. Verfasser: Baeg, Kang-Jun (VerfasserIn)
Weitere Verfasser: Khim, Dongyoon, Jung, Soon-Won, Kang, Minji, You, In-Kyu, Kim, Dong-Yu, Facchetti, Antonio, Noh, Yong-Young
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2012
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Polymers Fluorine 284SYP0193 Polymethyl Methacrylate 9011-14-7
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245 1 0 |a Remarkable enhancement of hole transport in top-gated N-type polymer field-effect transistors by a high-k dielectric for ambipolar electronic circuits 
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520 |a A remarkable enhancement of p-channel properties is achieved in initially n-channel dominant ambipolar P(NDI2OD-T2) organic field-effect transistors (OFETs) by the use of the fluorinated high-k dielectric P(VDF-TrFE). An almost two orders of magnitude increase in hole mobility (~0.11 cm(2) V(-1) s(-1) ) originates from a strong interface modification at the semiconductor/dielectric interface, which provides high-performance complementary-like inverters and ring oscillator circuits 
650 4 |a Journal Article 
650 4 |a Research Support, Non-U.S. Gov't 
650 7 |a Polymers  |2 NLM 
650 7 |a Fluorine  |2 NLM 
650 7 |a 284SYP0193  |2 NLM 
650 7 |a Polymethyl Methacrylate  |2 NLM 
650 7 |a 9011-14-7  |2 NLM 
700 1 |a Khim, Dongyoon  |e verfasserin  |4 aut 
700 1 |a Jung, Soon-Won  |e verfasserin  |4 aut 
700 1 |a Kang, Minji  |e verfasserin  |4 aut 
700 1 |a You, In-Kyu  |e verfasserin  |4 aut 
700 1 |a Kim, Dong-Yu  |e verfasserin  |4 aut 
700 1 |a Facchetti, Antonio  |e verfasserin  |4 aut 
700 1 |a Noh, Yong-Young  |e verfasserin  |4 aut 
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