|
|
|
|
LEADER |
01000caa a22002652 4500 |
001 |
NLM219285640 |
003 |
DE-627 |
005 |
20250214053253.0 |
007 |
cr uuu---uuuuu |
008 |
231224s2012 xx |||||o 00| ||eng c |
024 |
7 |
|
|a 10.1002/adma.201201464
|2 doi
|
028 |
5 |
2 |
|a pubmed25n0731.xml
|
035 |
|
|
|a (DE-627)NLM219285640
|
035 |
|
|
|a (NLM)22778060
|
040 |
|
|
|a DE-627
|b ger
|c DE-627
|e rakwb
|
041 |
|
|
|a eng
|
100 |
1 |
|
|a Baeg, Kang-Jun
|e verfasserin
|4 aut
|
245 |
1 |
0 |
|a Remarkable enhancement of hole transport in top-gated N-type polymer field-effect transistors by a high-k dielectric for ambipolar electronic circuits
|
264 |
|
1 |
|c 2012
|
336 |
|
|
|a Text
|b txt
|2 rdacontent
|
337 |
|
|
|a ƒaComputermedien
|b c
|2 rdamedia
|
338 |
|
|
|a ƒa Online-Ressource
|b cr
|2 rdacarrier
|
500 |
|
|
|a Date Completed 26.02.2013
|
500 |
|
|
|a Date Revised 30.09.2020
|
500 |
|
|
|a published: Print-Electronic
|
500 |
|
|
|a Citation Status MEDLINE
|
520 |
|
|
|a Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
|
520 |
|
|
|a A remarkable enhancement of p-channel properties is achieved in initially n-channel dominant ambipolar P(NDI2OD-T2) organic field-effect transistors (OFETs) by the use of the fluorinated high-k dielectric P(VDF-TrFE). An almost two orders of magnitude increase in hole mobility (~0.11 cm(2) V(-1) s(-1) ) originates from a strong interface modification at the semiconductor/dielectric interface, which provides high-performance complementary-like inverters and ring oscillator circuits
|
650 |
|
4 |
|a Journal Article
|
650 |
|
4 |
|a Research Support, Non-U.S. Gov't
|
650 |
|
7 |
|a Polymers
|2 NLM
|
650 |
|
7 |
|a Fluorine
|2 NLM
|
650 |
|
7 |
|a 284SYP0193
|2 NLM
|
650 |
|
7 |
|a Polymethyl Methacrylate
|2 NLM
|
650 |
|
7 |
|a 9011-14-7
|2 NLM
|
700 |
1 |
|
|a Khim, Dongyoon
|e verfasserin
|4 aut
|
700 |
1 |
|
|a Jung, Soon-Won
|e verfasserin
|4 aut
|
700 |
1 |
|
|a Kang, Minji
|e verfasserin
|4 aut
|
700 |
1 |
|
|a You, In-Kyu
|e verfasserin
|4 aut
|
700 |
1 |
|
|a Kim, Dong-Yu
|e verfasserin
|4 aut
|
700 |
1 |
|
|a Facchetti, Antonio
|e verfasserin
|4 aut
|
700 |
1 |
|
|a Noh, Yong-Young
|e verfasserin
|4 aut
|
773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 24(2012), 40 vom: 23. Okt., Seite 5433-9
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
|
773 |
1 |
8 |
|g volume:24
|g year:2012
|g number:40
|g day:23
|g month:10
|g pages:5433-9
|
856 |
4 |
0 |
|u http://dx.doi.org/10.1002/adma.201201464
|3 Volltext
|
912 |
|
|
|a GBV_USEFLAG_A
|
912 |
|
|
|a SYSFLAG_A
|
912 |
|
|
|a GBV_NLM
|
912 |
|
|
|a GBV_ILN_350
|
951 |
|
|
|a AR
|
952 |
|
|
|d 24
|j 2012
|e 40
|b 23
|c 10
|h 5433-9
|