Toward quantitative prediction of charge mobility in organic semiconductors : tunneling enabled hopping model

Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 24(2012), 26 vom: 10. Juli, Seite 3568-72
1. Verfasser: Geng, Hua (VerfasserIn)
Weitere Verfasser: Peng, Qian, Wang, Linjun, Li, Haijiao, Liao, Yi, Ma, Zhiying, Shuai, Zhigang
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2012
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Organosilicon Compounds bis(triisopropylsilylethynyl)pentacene
LEADER 01000naa a22002652 4500
001 NLM218503601
003 DE-627
005 20231224040615.0
007 cr uuu---uuuuu
008 231224s2012 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.201104454  |2 doi 
028 5 2 |a pubmed24n0728.xml 
035 |a (DE-627)NLM218503601 
035 |a (NLM)22684746 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Geng, Hua  |e verfasserin  |4 aut 
245 1 0 |a Toward quantitative prediction of charge mobility in organic semiconductors  |b tunneling enabled hopping model 
264 1 |c 2012 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 23.11.2012 
500 |a Date Revised 30.09.2020 
500 |a published: Print-Electronic 
500 |a Citation Status MEDLINE 
520 |a Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a A tunneling-enabled hopping mechanism is proposed, providing a pratical tool to quantitatively assess charge mobility in organic semiconductors. The paradoxical phenomena in TIPS-pentacene is well explained in that the optical probe indicates localized charges while transport measurements show bands of charge 
650 4 |a Journal Article 
650 4 |a Research Support, Non-U.S. Gov't 
650 7 |a Organosilicon Compounds  |2 NLM 
650 7 |a bis(triisopropylsilylethynyl)pentacene  |2 NLM 
700 1 |a Peng, Qian  |e verfasserin  |4 aut 
700 1 |a Wang, Linjun  |e verfasserin  |4 aut 
700 1 |a Li, Haijiao  |e verfasserin  |4 aut 
700 1 |a Liao, Yi  |e verfasserin  |4 aut 
700 1 |a Ma, Zhiying  |e verfasserin  |4 aut 
700 1 |a Shuai, Zhigang  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 24(2012), 26 vom: 10. Juli, Seite 3568-72  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:24  |g year:2012  |g number:26  |g day:10  |g month:07  |g pages:3568-72 
856 4 0 |u http://dx.doi.org/10.1002/adma.201104454  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 24  |j 2012  |e 26  |b 10  |c 07  |h 3568-72