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231224s2012 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201201356
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|a eng
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|a Tagliazucchi, Mario
|e verfasserin
|4 aut
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|a High-contrast photopatterning of photoluminescence within quantum dot films through degradation of a charge-transfer quencher
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|c 2012
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|a Text
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|a ƒaComputermedien
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|a Date Completed 05.11.2012
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Diffraction-limited, high-contrast photopatterning of the photoluminescence of layer-by-layer films comprising CdSeCdS@ZnS quantum dots and polyviologen is reported. The photoluminescence of the quantum dots is initially quantitatively quenched due to ultrafast photoinduced electron transfer to polyviologen. Photopatterning is achieved by high-power or prolonged illumination in air, which photochemically degrades the polyviologen and thereby restores the photoluminescence of the quantum dots
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Research Support, U.S. Gov't, Non-P.H.S.
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|a 26062-79-3
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|a Amin, Victor A
|e verfasserin
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|a Schneebeli, Severin T
|e verfasserin
|4 aut
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|a Stoddart, J Fraser
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|a Weiss, Emily A
|e verfasserin
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|t Advanced materials (Deerfield Beach, Fla.)
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|g 24(2012), 27 vom: 17. Juli, Seite 3617-21
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|g volume:24
|g year:2012
|g number:27
|g day:17
|g month:07
|g pages:3617-21
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