Near-surface spectrally stable nitrogen vacancy centres engineered in single crystal diamond

Near-surface spectrally stable nitrogen vacancy centres engineered in single crystal diamond

Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 24(2012), 25 vom: 03. Juli, Seite 3333-8
1. Verfasser: Stacey, Alastair (VerfasserIn)
Weitere Verfasser: Simpson, David A, Karle, Timothy J, Gibson, Brant C, Acosta, Victor M, Huang, Zhihong, Fu, Kai Mei C, Santori, Charles, Beausoleil, Raymond G, McGuinness, Liam P, Ganesan, Kumaravelu, Tomljenovic-Hanic, Snjezana, Greentree, Andrew D, Prawer, Steven
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2012
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Diamond 7782-40-3 Nitrogen N762921K75
Beschreibung
Zusammenfassung:Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
A method for engineering thin (<100 nm) layers of homoepitaxial diamond containing high quality, spectrally stable, isolated nitrogen-vacancy (NV) centres is reported. The photoluminescence excitation linewidth of the engineered NVs are as low as 140 MHz, at temperatures below 12 K, while the spin properties are at a level suitable for quantum memory and spin register applications. This methodology of NV fabrication is an important step toward scalable and practical diamond based photonic devices suitable for quantum information processing
Beschreibung:Date Completed 19.10.2012
Date Revised 30.09.2020
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201201074