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231224s2012 xx |||||o 00| ||eng c |
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|a 10.1021/la301213d
|2 doi
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|a pubmed24n0725.xml
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|a (DE-627)NLM217716180
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|a (NLM)22578151
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Werzer, Oliver
|e verfasserin
|4 aut
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| 245 |
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|a Interface induced crystal structures of dioctyl-terthiophene thin films
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|c 2012
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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| 500 |
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|a Date Completed 06.09.2012
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|a Date Revised 05.06.2012
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a Temperature dependent structural and morphological investigations on semiconducting dioctyl-terthiophene (DOTT) thin films prepared on silica surfaces reveals the coexistence of surface induce order and distinct crystalline/liquid crystalline bulk polymorphs. X-ray diffraction and scanning force microscopy measurements indicate that at room temperature two polymorphs are present: the surface induced phase grows directly on the silica interface and the bulk phase on top. At elevated temperatures the long-range order gradually decreases, and the crystal G (340 K), smectic F (348 K), and smectic C (360 K) phases are observed. Indexation of diffraction peaks reveals that an up-right standing conformation of DOTT molecules is present within all phases. A temperature stable interfacial layer close to the silica-DOTT interface acts as template for the formation of the different phases. Rapid cooling of the DOTT sample from the smectic C phase to room temperature results in freezing into a metastable crystalline state with an intermediated unit cell between the room temperature crystalline phase and the smectic C phase. The understanding of such interfacial induced phases in thin semiconducting liquid crystal films allows tuning of crystallographic and therefore physical properties within organic thin films
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Thiophenes
|2 NLM
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|a Silicon Dioxide
|2 NLM
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|a 7631-86-9
|2 NLM
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1 |
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|a Boucher, Nicolas
|e verfasserin
|4 aut
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|a de Silva, Johann P
|e verfasserin
|4 aut
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|a Gbabode, Gabin
|e verfasserin
|4 aut
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1 |
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|a Geerts, Yves H
|e verfasserin
|4 aut
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1 |
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|a Konovalov, Oleg
|e verfasserin
|4 aut
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|a Moser, Armin
|e verfasserin
|4 aut
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| 700 |
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|a Novak, Jiri
|e verfasserin
|4 aut
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| 700 |
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|a Resel, Roland
|e verfasserin
|4 aut
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| 700 |
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|a Sferrazza, Michele
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 28(2012), 22 vom: 05. Juni, Seite 8530-6
|w (DE-627)NLM098181009
|x 1520-5827
|7 nnns
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| 773 |
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|g volume:28
|g year:2012
|g number:22
|g day:05
|g month:06
|g pages:8530-6
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|u http://dx.doi.org/10.1021/la301213d
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