Multistate memory devices based on free-standing VO2/TiO2 microstructures driven by Joule self-heating

Multistate memory devices based on free-standing VO2/TiO2 microstructures driven by Joule self-heating

Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 24(2012), 21 vom: 05. Juni, Seite 2929-34
1. Verfasser: Pellegrino, Luca (VerfasserIn)
Weitere Verfasser: Manca, Nicola, Kanki, Teruo, Tanaka, Hidekazu, Biasotti, Michele, Bellingeri, Emilio, Siri, Antonio Sergio, Marré, Daniele
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2012
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Vanadium Compounds titanium dioxide 15FIX9V2JP Titanium D1JT611TNE
Beschreibung
Zusammenfassung:Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Two-terminal multistate memory elements based on VO(2)/TiO(2) thin film microcantilevers are reported. Volatile and non-volatile multiple resistance states are programmed by current pulses at temperatures within the hysteretic region of the metal-insulator transition of VO(2). The memory mechanism is based on current-induced creation of metallic clusters by self-heating of micrometric suspended regions and resistive reading via percolation
Beschreibung:Date Completed 19.09.2012
Date Revised 30.09.2020
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201104669