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231224s2012 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201104192
|2 doi
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|a pubmed24n0721.xml
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|a DE-627
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|e rakwb
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|a eng
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|a Leong, Wei Lin
|e verfasserin
|4 aut
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|a Manifestation of carrier relaxation through the manifold of localized states in PCDTBT:PC60BM bulk heterojunction material
|b the role of PC84BM traps on the carrier transport
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|c 2012
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 10.08.2012
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The transport and relaxation of photogenerated carriers in a bulk heterojunction (BHJ) material made of a blend of PCDTBT and PC(60) BM are studied as a function of the concentration of PC(84)BM impurities. For low concentrations of PC(84)BM, the increasing activation energy with delay time indicates transport dominated by trap-limited carrier drift while the photocarriers relax through a manifold of disorder-induced localized states near the band edge. In the BHJ material with high concentration of PC(84)BM, transport is dominated by carrier hopping within the PC(84)BM impurity band
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Research Support, U.S. Gov't, Non-P.H.S.
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|a Fullerenes
|2 NLM
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|a Polymers
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|a Thiadiazoles
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|a benzo-1,2,3-thiadiazole
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|a 273-77-8
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|a Hernandez-Sosa, Gerardo
|e verfasserin
|4 aut
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|a Cowan, Sarah R
|e verfasserin
|4 aut
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|a Moses, Daniel
|e verfasserin
|4 aut
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|a Heeger, Alan J
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 24(2012), 17 vom: 02. Mai, Seite 2273-7
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:24
|g year:2012
|g number:17
|g day:02
|g month:05
|g pages:2273-7
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|u http://dx.doi.org/10.1002/adma.201104192
|3 Volltext
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