Kinetics and mechanisms for the adsorption, dissociation, and diffusion of hydrogen in Ni and Ni/YSZ slabs : a DFT study

The adsorption, dissociation, and diffusion of hydrogen in Ni(100) and Ni(100)/YSZ(100) slabs with two different interfaces (Ni/cation and Ni/O interface) have been studied by the density functional theory (DFT) with the Perdew-Wang functional. The H(2) molecule is found to preferentially absorb on...

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Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1992. - 28(2012), 13 vom: 03. Apr., Seite 5596-605
1. Verfasser: Weng, Meng Hsiung (VerfasserIn)
Weitere Verfasser: Chen, Hsin-Tsung, Wang, Yao-Chun, Ju, Shin-Pon, Chang, Jee-Gong, Lin, M C
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2012
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article
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245 1 0 |a Kinetics and mechanisms for the adsorption, dissociation, and diffusion of hydrogen in Ni and Ni/YSZ slabs  |b a DFT study 
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520 |a The adsorption, dissociation, and diffusion of hydrogen in Ni(100) and Ni(100)/YSZ(100) slabs with two different interfaces (Ni/cation and Ni/O interface) have been studied by the density functional theory (DFT) with the Perdew-Wang functional. The H(2) molecule is found to preferentially absorb on a Top (T) site with side-on configuration on the Ni(100) surface, while the H-atom is strongly bound at a fcc Hollow (H) site. The barrier for the H(2) dissociation on both surfaces is calculated to be only ~0.1 eV. The potential energy pathways of H diffusion on pure Ni and Ni/YSZ with the two different interfaces are studied. Our calculated results show that the H-atom diffusion occurs via surface path rather than the bulk path. For the bulk path in Ni/YSZ, H-atom migration can occur more readily at the Ni/cation interface compared to the Ni/O interface. The existence of vacancy in the interface region is found to improve the mobility of H-atoms at the interface of Ni/YSZ slab. The rate constants for hydrogen dissociation and diffusion in pure Ni and Ni/YSZ are predicted 
650 4 |a Journal Article 
700 1 |a Chen, Hsin-Tsung  |e verfasserin  |4 aut 
700 1 |a Wang, Yao-Chun  |e verfasserin  |4 aut 
700 1 |a Ju, Shin-Pon  |e verfasserin  |4 aut 
700 1 |a Chang, Jee-Gong  |e verfasserin  |4 aut 
700 1 |a Lin, M C  |e verfasserin  |4 aut 
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