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231224s2012 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201103983
|2 doi
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|a eng
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|a Gao, Peng
|e verfasserin
|4 aut
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|a Direct observations of retention failure in ferroelectric memories
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|c 2012
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|a Text
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|a ƒaComputermedien
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|a Date Completed 11.06.2012
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|a Date Revised 30.09.2020
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|a published: Print
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|a Citation Status MEDLINE
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|a Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Nonvolatile ferroelectric random-access memory uses ferroelectric thin films to save a polar state written by an electric field that is retained when the field is removed. After switching, the high energy of the domain walls separating regions of unlike polarization can drive backswitching resulting in a loss of switched domain volume, or in the case of very small domains, complete retention loss
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|a Journal Article
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|a Nelson, Christopher T
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|a Jokisaari, Jacob R
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|a Zhang, Yi
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|a Wang, Enge
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|a Liu, Yuanming
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|a Li, Jiangyu
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|a Eom, Chang-Beom
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|a Pan, Xiaoqing
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
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|g 24(2012), 8 vom: 21. Feb., Seite 1106-10
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