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231224s2012 xx |||||o 00| ||eng c |
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|a 10.1021/la203436r
|2 doi
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|a eng
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1 |
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|a Losurdo, Maria
|e verfasserin
|4 aut
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|a Cysteamine-based functionalization of InAs surfaces
|b revealing the critical role of oxide interactions in biasing attachment
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|c 2012
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|a Text
|b txt
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 01.05.2012
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|a Date Revised 17.01.2012
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2011 American Chemical Society
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|a Attaching functional molecules such as thiols and proteins to semiconductor surfaces is increasingly exploited in functional devices such as sensors. Despite extensive research to understand this interface and demonstrate a robust protocol for attachment, the bonding chemistry of thiolates to III-V surfaces has been under great debate in the literature. This study provides a comprehensive chemical model for the attachment of thiols to InAs, an increasingly device-relevant III-V semiconductor, using cysteamine as a model molecule. We examine the attachment of cysteamine to InAs via the thiol group using X-ray photoelectron spectroscopy and spectroscopic ellipsometry and confirm that thiolate bonding to the substrate occurs preferentially to As sites over In sites as a limit. These experiments explore the interplay of the native oxide chemical properties, the cysteamine concentration, and the evolving InAs surface chemistry with functionalization. The thiol-InAs interaction can be framed as a general acid-base reaction, where the nucleophilic and/or electrophilic attack of the surface (i.e., binding to In sites and/or As sites) depends on the acidity of the thiol. The roles of the initial oxide composition, the solvent of the functionalizing solution, and the cysteamine as a limiting reagent in fully displacing the oxide and creating In-S and As-S bonds are highlighted
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|a Journal Article
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1 |
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|a Wu, Pae C
|e verfasserin
|4 aut
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|a Kim, Tong-Ho
|e verfasserin
|4 aut
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|a Bruno, Giovanni
|e verfasserin
|4 aut
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|a Brown, April S
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 28(2012), 2 vom: 17. Jan., Seite 1235-45
|w (DE-627)NLM098181009
|x 1520-5827
|7 nnns
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| 773 |
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|g volume:28
|g year:2012
|g number:2
|g day:17
|g month:01
|g pages:1235-45
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|u http://dx.doi.org/10.1021/la203436r
|3 Volltext
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