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231224s2011 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201103305
|2 doi
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|a pubmed24n0711.xml
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|a eng
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|a Yi, H T
|e verfasserin
|4 aut
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|a Vacuum lamination approach to fabrication of high-performance single-crystal organic field-effect transistors
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|c 2011
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|a Text
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Completed 13.04.2012
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a A novel vacuum lamination approach to fabrication of high-performance single-crystal organic field-effect transistors has been developed. The non-destructive nature of this method allows a direct comparison of field-effect mobilities achieved with various gate dielectrics using the same single-crystal sample. The method also allows gating delicate systems, such as n -type crystals and SAM-coated surfaces, without perturbation
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|a Journal Article
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|a Research Support, U.S. Gov't, Non-P.H.S.
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|a Organic Chemicals
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|a Polyethylene Terephthalates
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|a Polymers
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|a Xylenes
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|a parylene
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|a Chen, Y
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|a Czelen, K
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|a Podzorov, V
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 23(2011), 48 vom: 22. Dez., Seite 5807-11
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|x 1521-4095
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|g volume:23
|g year:2011
|g number:48
|g day:22
|g month:12
|g pages:5807-11
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|u http://dx.doi.org/10.1002/adma.201103305
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