n-Doping of organic electronic materials using air-stable organometallics

n-Doping of organic electronic materials using air-stable organometallics

Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 24(2012), 5 vom: 02. Feb., Seite 699-703
1. Verfasser: Guo, Song (VerfasserIn)
Weitere Verfasser: Kim, Sang Bok, Mohapatra, Swagat K, Qi, Yabing, Sajoto, Tissa, Kahn, Antoine, Marder, Seth R, Barlow, Stephen
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2012
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Iron Compounds Organometallic Compounds rhodocene 12318-21-7 Ruthenium 7UI0TKC3U5
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520 |a Air-stable dimers of sandwich compounds including rhodocene and (pentamethylcyclopentadienyl)(arene)ruthenium and iron derivatives can be used for n-doping electron-transport materials with electron affinities as small as 2.8 eV. A p-i-n homojunction diode based on copper phthalocyanine and using rhodocene dimer as n-dopant shows a rectification ratio of greater than 10(6) at 4 V 
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650 4 |a Research Support, Non-U.S. Gov't 
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700 1 |a Kim, Sang Bok  |e verfasserin  |4 aut 
700 1 |a Mohapatra, Swagat K  |e verfasserin  |4 aut 
700 1 |a Qi, Yabing  |e verfasserin  |4 aut 
700 1 |a Sajoto, Tissa  |e verfasserin  |4 aut 
700 1 |a Kahn, Antoine  |e verfasserin  |4 aut 
700 1 |a Marder, Seth R  |e verfasserin  |4 aut 
700 1 |a Barlow, Stephen  |e verfasserin  |4 aut 
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