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231224s2012 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201102597
|2 doi
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|a pubmed24n0707.xml
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|a (NLM)21989741
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|a DE-627
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|e rakwb
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|a eng
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|a Hasegawa, Tsuyoshi
|e verfasserin
|4 aut
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|a Atomic switch
|b atom/ion movement controlled devices for beyond von-neumann computers
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|c 2012
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|a Text
|b txt
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Completed 23.04.2012
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a An atomic switch is a nanoionic device that controls the diffusion of metal ions/atoms and their reduction/oxidation processes in the switching operation to form/annihilate a conductive path. Since metal atoms can provide a highly conductive channel even if their cluster size is in the nanometer scale, atomic switches may enable downscaling to smaller than the 11 nm technology node, which is a great challenge for semiconductor devices. Atomic switches also possess novel characteristics, such as high on/off ratios, very low power consumption and non-volatility. The unique operating mechanisms of these devices have enabled the development of various types of atomic switch, such as gap-type and gapless-type two-terminal atomic switches and three-terminal atomic switches. Novel functions, such as selective volatile/nonvolatile, synaptic, memristive, and photo-assisted operations have been demonstrated. Such atomic switch characteristics can not only improve the performance of present-day electronic systems, but also enable development of new types of electronic systems, such as beyond von- Neumann computers
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|a Review
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|a Gold
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|a 7440-57-5
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|a Terabe, Kazuya
|e verfasserin
|4 aut
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|a Tsuruoka, Tohru
|e verfasserin
|4 aut
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|a Aono, Masakazu
|e verfasserin
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
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|g 24(2012), 2 vom: 10. Jan., Seite 252-67
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|x 1521-4095
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|g volume:24
|g year:2012
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|g day:10
|g month:01
|g pages:252-67
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|u http://dx.doi.org/10.1002/adma.201102597
|3 Volltext
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