Improved screening ability of ferroelectric-semiconductor interface
Recent progress in integrating ferroelectrics directly on silicon opens the exciting possibility of implementing ferroelectric-semiconductor devices. One of the major problems for such integration is the instability of the ferroelectric state in very thin films, which is mainly controlled by the scr...
Ausführliche Beschreibung
Bibliographische Detailangaben
| Veröffentlicht in: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 58(2011), 9 vom: 15. Sept., Seite 1959-61
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| 1. Verfasser: |
Gureev, Maxim Y
(VerfasserIn) |
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| Weitere Verfasser: |
Tagantsev, Alexander K,
Setter, Nava |
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| Format: | Online-Aufsatz
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| Sprache: | English |
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| Veröffentlicht: |
2011
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| Zugriff auf das übergeordnete Werk: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control
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| Schlagworte: | Journal Article
Research Support, Non-U.S. Gov't |
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