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231224s2011 xx |||||o 00| ||eng c |
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|a 10.1021/la201775c
|2 doi
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|a pubmed24n0704.xml
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|a (DE-627)NLM211323802
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|a (NLM)21902262
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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1 |
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|a Hamid, Rossuriati Dol
|e verfasserin
|4 aut
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|a Ionic strength effects on silicic acid (H4SiO4) sorption and oligomerization on an iron oxide surface
|b an interesting interplay between electrostatic and chemical forces
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|c 2011
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 16.02.2012
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|a Date Revised 25.10.2011
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a The effect of ionic strength on reactions at aqueous interfaces can provide insights into the nature of the chemistry involved. The adsorption of H(4)SiO(4) on iron oxides at low surface silicate concentration (Γ(Si)) forms monomeric silicate complexes with Fe-O-Si linkages, but as Γ(Si) increases silicate oligomers with Si-O-Si linkages become increasingly prevalent. In this paper, the effect of ionic strength (I) on both Γ(Si) and the extent of silicate oligomerization on the ferrihydrite surface is determined at pH 4, 7, and 10, where the surface is, respectively, positive, nearly neutral, and negatively charged. At pH 4, an increase in ionic strength causes Γ(Si) to decrease at a given H(4)SiO(4) solution concentration, while the proportion of oligomers on the surface at a given Γ(Si) increases. At pH 10, the opposite is observed; Γ(Si) increases as I increases, while the proportion of surface oligomers at a given Γ(Si) decreases. Ionic strength has only a small effect on the surface chemistry of H(4)SiO(4) at pH 7, but at low Γ(Si) this effect is in the direction observed at pH 4 while at high Γ(Si) the effect is in the direction observed at pH 10. The pH where the surface has zero charge decreases from ≈8 to 6 as Γ(Si) increases so that the surface potential (Ψ) is positive at pH 4 for all Γ(Si) and at pH 7 with low Γ(Si). Likewise, Ψ < 0 at pH 10 for all Γ(Si) and at pH 7 with high Γ(Si). The diffuse layer model is used to unravel the complex and subtle interactions between surface potential (Ψ) and chemical parameters that influence interfacial silicate chemistry. This analysis reveals that the decrease in the absolute value of Ψ as I increases causes Γ(Si) to decrease or increase where Ψ is, respectively, positive or negative. Therefore, at a given Γ(Si), the solution H(4)SiO(4) concentration changes with I, and because oligomerization has a higher H(4)SiO(4) stoichiometry coefficient than monomer adsorption, this results in the observed dependence of the extent of silicate oligomerization on I
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|a Journal Article
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|a Swedlund, Peter J
|e verfasserin
|4 aut
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|a Song, Yantao
|e verfasserin
|4 aut
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|a Miskelly, Gordon M
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 27(2011), 21 vom: 01. Nov., Seite 12930-7
|w (DE-627)NLM098181009
|x 1520-5827
|7 nnns
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| 773 |
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|g volume:27
|g year:2011
|g number:21
|g day:01
|g month:11
|g pages:12930-7
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|u http://dx.doi.org/10.1021/la201775c
|3 Volltext
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