Characterizing the molecular order of phosphonic acid self-assembled monolayers on indium tin oxide surfaces

© 2011 American Chemical Society

Bibliographische Detailangaben
Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1992. - 27(2011), 19 vom: 04. Okt., Seite 11883-8
1. Verfasser: Losego, Mark D (VerfasserIn)
Weitere Verfasser: Guske, Joshua T, Efremenko, Alina, Maria, Jon-Paul, Franzen, Stefan
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2011
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article Research Support, U.S. Gov't, Non-P.H.S. Membranes, Artificial Organophosphonates Tin Compounds indium tin oxide 71243-84-0
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520 |a Self-assembled monolayers (SAMs) of alkanephosphonic acids with chain lengths between 8 and 18 carbon units were formed on thin films of indium tin oxide (ITO) sputter-deposited on silicon substrates with 400 nm thermally grown SiO(2). The silicon substrates, while not intended for use in near-IR or visible optics applications, do provide smooth surfaces that permit systematic engineering of grain size and surface roughness as a function of the sputter pressure. Argon sputter pressures from 4 to 20 mTorr show systematic changes in surface morphology ranging from smooth, micrometer-sized grain structures to <50 nm grains with 3× higher surface roughness. Near-edge X-ray absorption fine structure (NEXAFS) spectroscopy experiments are conducted for alkanephosphonic acids deposited on these wide range of ITO surfaces to evaluate the effects of these morphological features on monolayer ordering. Results indicate that long-chain SAMs are more highly ordered, and have a smaller tilt angle, than short-chain SAMs. Surprisingly, the 1-octadecyl phosphonic acids maintain their order as the lateral grain dimensions of the ITO surface shrink to ∼50 nm. It is only when the ITO surface roughness becomes greater than the SAM chain length (∼15 Å) that SAMs are observed to become relatively disordered 
650 4 |a Journal Article 
650 4 |a Research Support, U.S. Gov't, Non-P.H.S. 
650 7 |a Membranes, Artificial  |2 NLM 
650 7 |a Organophosphonates  |2 NLM 
650 7 |a Tin Compounds  |2 NLM 
650 7 |a indium tin oxide  |2 NLM 
650 7 |a 71243-84-0  |2 NLM 
700 1 |a Guske, Joshua T  |e verfasserin  |4 aut 
700 1 |a Efremenko, Alina  |e verfasserin  |4 aut 
700 1 |a Maria, Jon-Paul  |e verfasserin  |4 aut 
700 1 |a Franzen, Stefan  |e verfasserin  |4 aut 
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