Tunable capacitors employing BZN/BST thin films for RF applications
Tunable parallel-plate capacitors employing Bi(1.5)Zn(1.0)Nb(1.5)O(7)/Ba(0.5)Sr(0.5)TiO(3) (BZN/BST) thin films for RF applications are reported. The intermediate frequency measurements indicate that the BZN/BST-based varactors demonstrate large tunability of 39% at 40 V and high device quality fact...
Ausführliche Beschreibung
Bibliographische Detailangaben
| Veröffentlicht in: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 58(2011), 6 vom: 21. Juni, Seite 1140-4
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| 1. Verfasser: |
Li, Ruguan
(VerfasserIn) |
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| Weitere Verfasser: |
Jiang, Shuwen,
Gao, Libin,
Wang, Luyu,
Li, Yanrong |
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| Format: | Online-Aufsatz
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| Sprache: | English |
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| Veröffentlicht: |
2011
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| Zugriff auf das übergeordnete Werk: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control
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| Schlagworte: | Journal Article
Research Support, Non-U.S. Gov't |
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