Photoinduced memory with hybrid integration of an organic fullerene derivative and an inorganic nanogap-embedded field-effect transistor for low-voltage operation

Photoinduced memory with hybrid integration of an organic fullerene derivative and an inorganic nanogap-embedded field-effect transistor for low-voltage operation

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 23(2011), 29 vom: 02. Aug., Seite 3326-31
1. Verfasser: Kim, Chung-Jin (VerfasserIn)
Weitere Verfasser: Choi, Sung-Jin, Kim, Sungho, Han, Jin-Woo, Kim, Hoyeon, Yoo, Seunghyup, Choi, Yang-Kyu
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2011
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't (6,6)-phenyl C61-butyric acid methyl ester Fullerenes Silicon Z4152N8IUI
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700 1 |a Choi, Sung-Jin  |e verfasserin  |4 aut 
700 1 |a Kim, Sungho  |e verfasserin  |4 aut 
700 1 |a Han, Jin-Woo  |e verfasserin  |4 aut 
700 1 |a Kim, Hoyeon  |e verfasserin  |4 aut 
700 1 |a Yoo, Seunghyup  |e verfasserin  |4 aut 
700 1 |a Choi, Yang-Kyu  |e verfasserin  |4 aut 
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