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231224s2011 xx |||||o 00| ||eng c |
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|a 10.1021/la200471b
|2 doi
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|a eng
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| 100 |
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|a Seitz, Oliver
|e verfasserin
|4 aut
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|a One-step selective chemistry for silicon-on-insulator sensor geometries
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|c 2011
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|a Date Completed 28.09.2011
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|a Date Revised 21.11.2013
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a © 2011 American Chemical Society
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|a A one-step functionalization process has been developed for oxide-free channels of field effect transistor structures, enabling a self-selective grafting of receptor molecules on the device active area, while protecting the nonactive part from nonspecific attachment of target molecules. Characterization of the self-organized chemical process is performed on both Si(100) and SiO(2) surfaces by infrared and X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. This selective functionalization leads to structures with better chemical stability, reproducibility, and reliability than current SiO(2)-based devices using silane molecules
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Research Support, U.S. Gov't, Non-P.H.S.
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|a Silicon
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| 700 |
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|a Fernandes, Poornika G
|e verfasserin
|4 aut
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|a Mahmud, Gazi A
|e verfasserin
|4 aut
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|a Wen, Huang-Chun
|e verfasserin
|4 aut
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|a Stiegler, Harvey J
|e verfasserin
|4 aut
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|a Chapman, Richard A
|e verfasserin
|4 aut
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|a Vogel, Eric M
|e verfasserin
|4 aut
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|a Chabal, Yves J
|e verfasserin
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| 773 |
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 27(2011), 12 vom: 21. Juni, Seite 7337-40
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|x 1520-5827
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| 773 |
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|g volume:27
|g year:2011
|g number:12
|g day:21
|g month:06
|g pages:7337-40
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|u http://dx.doi.org/10.1021/la200471b
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