Micro Photo Detector Fabricated of Ferroelectric-Metal Heterostructure

The anomalous photovoltaic effect (APE) in ferroelectric thin films has been utilized for the development of an optical micro-detector active in the visible range (from 350 to 800 nm). La-doped Pb(Zr,Ti)O(3) (PLZT) ferroelectric films epitaxially grown on Pt(001)/Mg(001) substrate were fabricated in...

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Veröffentlicht in:Japanese journal of applied physics. Part 1, Regular papers & short notes. - 1998. - 44(2005), 2005 vom: 01. Sept., Seite 6105-6108
1. Verfasser: Zomorrodian, A (VerfasserIn)
Weitere Verfasser: Wu, N J, Song, Y, Stahl, S, Ignatiev, A, Trexler, E Brady, Garcia, C A
Format: Aufsatz
Sprache:English
Veröffentlicht: 2005
Zugriff auf das übergeordnete Werk:Japanese journal of applied physics. Part 1, Regular papers & short notes
Schlagworte:Journal Article
Beschreibung
Zusammenfassung:The anomalous photovoltaic effect (APE) in ferroelectric thin films has been utilized for the development of an optical micro-detector active in the visible range (from 350 to 800 nm). La-doped Pb(Zr,Ti)O(3) (PLZT) ferroelectric films epitaxially grown on Pt(001)/Mg(001) substrate were fabricated into micro-detector arrays and characterized as to their optical response. The Au/PLZT/Pt/MgO device was self-polarized in the as-deposited form with the polarization vector perpendicular to film surface. The heterostructure photovoltage response ranged from 100 to 200 mV, and the photocurrent was ~30 nA/cm(2) for devices of ~250 μm diameter under illumination of 100 mW/cm(2) at wavelengths from 400 to 580 nm. Such micro-detectors can be used for optical sensors in MEMS devices as well as for electrical stimulators of biological cells
Beschreibung:Date Revised 20.10.2021
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Citation Status PubMed-not-MEDLINE