Micro Photo Detector Fabricated of Ferroelectric-Metal Heterostructure
The anomalous photovoltaic effect (APE) in ferroelectric thin films has been utilized for the development of an optical micro-detector active in the visible range (from 350 to 800 nm). La-doped Pb(Zr,Ti)O(3) (PLZT) ferroelectric films epitaxially grown on Pt(001)/Mg(001) substrate were fabricated in...
Veröffentlicht in: | Japanese journal of applied physics. Part 1, Regular papers & short notes. - 1998. - 44(2005), 2005 vom: 01. Sept., Seite 6105-6108 |
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Weitere Verfasser: | , , , , , |
Format: | Aufsatz |
Sprache: | English |
Veröffentlicht: |
2005
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Zugriff auf das übergeordnete Werk: | Japanese journal of applied physics. Part 1, Regular papers & short notes |
Schlagworte: | Journal Article |
Zusammenfassung: | The anomalous photovoltaic effect (APE) in ferroelectric thin films has been utilized for the development of an optical micro-detector active in the visible range (from 350 to 800 nm). La-doped Pb(Zr,Ti)O(3) (PLZT) ferroelectric films epitaxially grown on Pt(001)/Mg(001) substrate were fabricated into micro-detector arrays and characterized as to their optical response. The Au/PLZT/Pt/MgO device was self-polarized in the as-deposited form with the polarization vector perpendicular to film surface. The heterostructure photovoltage response ranged from 100 to 200 mV, and the photocurrent was ~30 nA/cm(2) for devices of ~250 μm diameter under illumination of 100 mW/cm(2) at wavelengths from 400 to 580 nm. Such micro-detectors can be used for optical sensors in MEMS devices as well as for electrical stimulators of biological cells |
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Beschreibung: | Date Revised 20.10.2021 published: Print Citation Status PubMed-not-MEDLINE |