Hard X-ray microbeam lithography using a Fresnel zone plate with a long focal length

Focused hard X-ray microbeams for use in X-ray nanolithography have been investigated. A 7.5 keV X-ray beam generated at an undulator was focused to about 3 µm using a Fresnel zone plate fabricated on silicon. The focused X-ray beam retains a high degree of collimation owing to the long focal length...

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Détails bibliographiques
Publié dans:Journal of synchrotron radiation. - 1994. - 18(2011), Pt 2 vom: 21. März, Seite 143-7
Auteur principal: Lee, S Y (Auteur)
Autres auteurs: Cho, I H, Kim, J M, Kang, H C, Noh, D Y
Format: Article en ligne
Langue:English
Publié: 2011
Accès à la collection:Journal of synchrotron radiation
Sujets:Journal Article Research Support, Non-U.S. Gov't
Description
Résumé:Focused hard X-ray microbeams for use in X-ray nanolithography have been investigated. A 7.5 keV X-ray beam generated at an undulator was focused to about 3 µm using a Fresnel zone plate fabricated on silicon. The focused X-ray beam retains a high degree of collimation owing to the long focal length of the zone plate, which greatly facilitates hard X-ray nanoscale lithography. The focused X-ray microbeam was successfully utilized to fabricate patterns with features as small as 100 nm on a photoresist
Description:Date Completed 03.06.2011
Date Revised 21.02.2011
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1600-5775
DOI:10.1107/S0909049510044535