Towards gigahertz operation : ultrafast low turn-on organic diodes and rectifiers based on C60 and tungsten oxide

Ultrafast organic diodes with low turn-on voltage based on a junction between C60 and WO3 are proposed. The high electron mobility of C60 layers and the optimal work function of hexamethyldisilazane (HMDS)-treated WO3 layers together provide ideal diode characteristics including high rectification r...

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Bibliographische Detailangaben

Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 23(2011), 5 vom: 01. Feb., Seite 644-8
1. Verfasser:	Im, Dongmo (VerfasserIn)
Weitere Verfasser:	Moon, Hanul, Shin, Minchul, Kim, Joungho, Yoo, Seunghyup
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2011
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Letter Research Support, Non-U.S. Gov't Fullerenes Organic Chemicals Oxides tungsten oxide 940E10M08M fullerene C60 NP9U26B839 Tungsten V9306CXO6G