Silicon-based near-visible logpile photonic crystal
A nanocavity structure is embedded inside a silicon logpile photonic crystal that demonstrates tunable absorption behavior at near visible wavelengths well beyond the absorption edge of silicon. This is due to silicon’s indirect bandgap resulting in a relatively slow increase in the absorption of si...
| Veröffentlicht in: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 22(2010), 37 vom: 01. Okt., Seite 4180-5 |
|---|---|
| 1. Verfasser: | |
| Weitere Verfasser: | , |
| Format: | Online-Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2010
|
| Zugriff auf das übergeordnete Werk: | Advanced materials (Deerfield Beach, Fla.) |
| Schlagworte: | Journal Article Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S. Silicon Z4152N8IUI |
| Zusammenfassung: | A nanocavity structure is embedded inside a silicon logpile photonic crystal that demonstrates tunable absorption behavior at near visible wavelengths well beyond the absorption edge of silicon. This is due to silicon’s indirect bandgap resulting in a relatively slow increase in the absorption of silicon with decreasing wavelength. Our results open up the possibility of utilizing the wide, complete three dimensional photonic gap enabled by the large refractive index of silicon to create three dimensional photonic crystal based devices well into the visible regime |
|---|---|
| Beschreibung: | Date Completed 18.01.2011 Date Revised 30.09.2020 published: Print Citation Status MEDLINE |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.201001965 |