ALD growth characteristics of ZnS films deposited from organozinc and hydrogen sulfide precursors

Growth characteristics of zinc sulfide thin films deposited from dialkylzinc and H(2)S reactants by the atomic layer deposition technique have been investigated by quantum chemical methods. The steady-state growth of the films was simulated by studying the reaction of the Zn precursor with the hydro...

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Veröffentlicht in:	Langmuir : the ACS journal of surfaces and colloids. - 1992. - 26(2010), 14 vom: 20. Juli, Seite 11899-906
1. Verfasser:	Tanskanen, Jukka T (VerfasserIn)
Weitere Verfasser:	Bakke, Jonathan R, Bent, Stacey F, Pakkanen, Tapani A
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2010
Zugriff auf das übergeordnete Werk:	Langmuir : the ACS journal of surfaces and colloids
Schlagworte:	Journal Article