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231223s2010 xx |||||o 00| ||eng c |
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|a 10.1021/la100273q
|2 doi
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|a pubmed24n0662.xml
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|a DE-627
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|e rakwb
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|a eng
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| 100 |
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|a Li, Feng
|e verfasserin
|4 aut
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| 245 |
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|a Photopolymerization of self-assembled monolayers of diacetylenic alkylphosphonic acids on group-III nitride substrates
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|c 2010
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 30.09.2010
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|a Date Revised 30.06.2010
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|a published: Print
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|a Citation Status PubMed-not-MEDLINE
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|a This paper describes the fabrication and characterization of photopolymerizable alkylphosphonate self-assembled monolayers (SAMs) on group-III nitride substrates including GaN and Al(x)Ga(1-x)N (AlGaN; x = 0.2 and 0.25). Contact angle goniometry, visible absorption spectroscopy, and atomic force microscopy were used to assess the formation, desorption, and photopolymerization of SAMs of diacetylenic alkylphosphonic acids (CH(3)(CH(2))(n)-C[triple bond]C-C[triple bond]C-(CH(2))(m)PO(OH)(2); (m, n) = (3, 11), (6, 8), and (9, 5)). As with GaN substrates (Ito, T.; Forman, S. M.; Cao, C.; Li, F.; Eddy, C. R., Jr.; Mastro, M. A.; Holm, R. T.; Henry, R. L.; Hohn, K.; Edgar, J. H. Langmuir 2008, 24, 6630-6635), alkylphosphonic acids formed SAMs on UV/O(3)-treated AlGaN substrates from their toluene solutions in contrast to other primary substituted hydrocarbons with a terminal -COOH, -NH(2), -OH, or -SH group. Diacetylenic alkylphosphonate SAMs on group-III nitrides could be polymerized by UV irradiation (254 nm), as indicated by the appearance of a visible absorption band around 640 nm and also by their significantly reduced desorption from the surface in a 0.1 M aqueous NaOH solution. A longer UV irradiation time was required to maximize the photopolymerization of a SAM having a diacetylene group close to the terminal phosphonate moiety, probably because of the hindrance of the topochemical polymerization due to the limited flexibility of the cross-linking moieties on an atomically rough substrate surface
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|a Journal Article
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|a Shishkin, Evgeniy
|e verfasserin
|4 aut
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|a Mastro, Michael A
|e verfasserin
|4 aut
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|a Hite, Jennifer K
|e verfasserin
|4 aut
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|a Eddy, Charles R
|c Jr
|e verfasserin
|4 aut
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| 700 |
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|a Edgar, J H
|e verfasserin
|4 aut
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| 700 |
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|a Ito, Takashi
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 26(2010), 13 vom: 06. Juli, Seite 10725-30
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|x 1520-5827
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|g volume:26
|g year:2010
|g number:13
|g day:06
|g month:07
|g pages:10725-30
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