Characterization of doped BST thin films deposited by sol-gel for tunable microwave devices

BST thin films with various dopants were grown by the sol-gel method on platinized silicon and MgO substrates. Their dielectric properties were investigated at low frequency (up to 1 MHz) on silicon with parallel-plate capacitors and at high frequency (up to 15 GHz) with interdigitated capacitors on...

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Veröffentlicht in:IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 57(2010), 5 vom: 30. Mai, Seite 1029-33
1. Verfasser: Khalfallaoui, Abderrazek (VerfasserIn)
Weitere Verfasser: Vélu, Gabriel, Burgnies, Ludovic, Carru, Jean-Claude
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2010
Zugriff auf das übergeordnete Werk:IEEE transactions on ultrasonics, ferroelectrics, and frequency control
Schlagworte:Journal Article