Ferroelectric field effect transistors for memory applications
The non-volatile polarization of a ferroelectric is a promising candidate for digital memory applications. Ferroelectric capacitors have been successfully integrated with silicon electronics, where the polarization state is read out by a device based on a field effect transistor configuration. Coupl...
Ausführliche Beschreibung
Bibliographische Detailangaben
| Veröffentlicht in: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 22(2010), 26-27 vom: 20. Juli, Seite 2957-61
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| 1. Verfasser: |
Hoffman, Jason
(VerfasserIn) |
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| Weitere Verfasser: |
Pan, Xiao,
Reiner, James W,
Walker, Fred J,
Han, J P,
Ahn, Charles H,
Ma, T P |
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| Format: | Online-Aufsatz
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| Sprache: | English |
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| Veröffentlicht: |
2010
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| Zugriff auf das übergeordnete Werk: | Advanced materials (Deerfield Beach, Fla.)
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| Schlagworte: | Journal Article
Research Support, Non-U.S. Gov't
Research Support, U.S. Gov't, Non-P.H.S.
Metals
Oxides |
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